Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction
- Authors: Vostokov N.V.1, Daniltsev V.M.1, Kraev S.A.1, Krukov V.L.2, Skorokhodov E.V.1, Strelchenko S.S.2, Shashkin V.I.1
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Affiliations:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- OOO “MeGa Epitech”
- Issue: Vol 53, No 10 (2019)
- Pages: 1279-1281
- Section: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/207121
- DOI: https://doi.org/10.1134/S1063782619100245
- ID: 207121
Cite item
Abstract
The first results on the development of an original power GaAs-based field-effect transistor with a vertical channel controlled by a p–n junction are presented. The main manufacturing feature is the use of two separate epitaxial growth processes when forming the transistor structure. The transistor part containing the drain, drift, and gate regions is grown by liquid-phase epitaxy. Metalorganic gas-phase epitaxy is used to form the channel and source regions.
Keywords
About the authors
N. V. Vostokov
Institute for Physics of Microstructures, Russian Academy of Sciences
Author for correspondence.
Email: vostokov@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950
V. M. Daniltsev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: vostokov@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950
S. A. Kraev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: vostokov@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950
V. L. Krukov
OOO “MeGa Epitech”
Email: vostokov@ipm.sci-nnov.ru
Russian Federation, Kaluga, 248033
E. V. Skorokhodov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: vostokov@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950
S. S. Strelchenko
OOO “MeGa Epitech”
Email: vostokov@ipm.sci-nnov.ru
Russian Federation, Kaluga, 248033
V. I. Shashkin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: vostokov@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950