High Quality Graphene Grown by Sublimation on 4H-SiC (0001)
- Authors: Lebedev A.A.1, Bokai K.A.2, Gushchina E.V.1, Dunaevskiy M.S.1, Eliseyev I.A.1, Smirnov A.N.1, Lebedev S.P.3, Usachov D.Y.2, Davydov V.Y.1, Pezoldt J.4
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Affiliations:
- Ioffe Institute
- Saint Petersburg State University
- ITMO University
- Technische Universität Ilmenau
- Issue: Vol 52, No 14 (2018)
- Pages: 1882-1885
- Section: Graphene
- URL: https://journals.rcsi.science/1063-7826/article/view/205119
- DOI: https://doi.org/10.1134/S1063782618140154
- ID: 205119
Cite item
Abstract
The structural and electronic characteristics of epitaxial graphene films grown by thermal decomposition of the Si face of a semi-insulating 4H-SiC substrate in an argon environment have been studied by a large set of analytical techniques. It is shown that the results of a complex study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films. The charge-carrier concentration in the graphene layer was within 7 × 1011–1 × 1012 cm–2, and the maximum mobility of electrons at room temperature approached 6000 cm2/(V s).
About the authors
A. A. Lebedev
Ioffe Institute
Email: valery.davydov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
K. A. Bokai
Saint Petersburg State University
Email: valery.davydov@mail.ioffe.ru
Russian Federation, St. Petersburg, 199034
E. V. Gushchina
Ioffe Institute
Email: valery.davydov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. S. Dunaevskiy
Ioffe Institute
Email: valery.davydov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. A. Eliseyev
Ioffe Institute
Email: valery.davydov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. N. Smirnov
Ioffe Institute
Email: valery.davydov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. P. Lebedev
ITMO University
Email: valery.davydov@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101
D. Yu. Usachov
Saint Petersburg State University
Email: valery.davydov@mail.ioffe.ru
Russian Federation, St. Petersburg, 199034
V. Yu. Davydov
Ioffe Institute
Author for correspondence.
Email: valery.davydov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
J. Pezoldt
Technische Universität Ilmenau
Email: valery.davydov@mail.ioffe.ru
Germany, Ilmenau, 98693