Email this article On a new method of heterojunction formation in III–V nanowires
- Authors: Sibirev N.V.1,2, Koryakin A.A.1,2, Dubrovskii V.G.1,3,4,5
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Affiliations:
- St. Petersburg National Research Academic University—Nanotechnology Research and Education Center
- St. Petersburg State Polytechnic University
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- St. Petersburg State University
- Ioffe Physical–Technical Institute
- Issue: Vol 50, No 12 (2016)
- Pages: 1566-1568
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198761
- DOI: https://doi.org/10.1134/S1063782616120198
- ID: 198761
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Abstract
The process of the formation of axial heterostructures in nanowires is considered on the basis of the vapor–liquid–solid model of growth. A new method of heterostructure formation in (Al, Ga)As nanowires by varying the arsenic flux is proposed.
About the authors
N. V. Sibirev
St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; St. Petersburg State Polytechnic University
Author for correspondence.
Email: NickSibirev@yandex.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251
A. A. Koryakin
St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; St. Petersburg State Polytechnic University
Email: NickSibirev@yandex.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251
V. G. Dubrovskii
St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics; St. Petersburg State University; Ioffe Physical–Technical Institute
Email: NickSibirev@yandex.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 199034; St. Petersburg, 194021
