Si:Si LEDs with room-temperature dislocation-related luminescence

N. A. Sobolev; A. E. Kalyadin; M. V. Konovalov; P. N. Aruev; V. V. Zabrodskiy; E. I. Shek; K. F. Shtel’makh; A. N. Mikhaylov; D. I. Tetel’baum

doi:10.1134/S1063782616020238

Si:Si LEDs with room-temperature dislocation-related luminescence

Authors: Sobolev N.A.¹, Kalyadin A.E.¹, Konovalov M.V.¹, Aruev P.N.¹, Zabrodskiy V.V.¹, Shek E.I.¹, Shtel’makh K.F.¹^,2, Mikhaylov A.N.³, Tetel’baum D.I.³
Affiliations:
1. Ioffe Physical–Technical Institute
2. Peter the Great St. Petersburg Polytechnic University
3. Lobachevsky State University of Nizhny Novgorod
Issue: Vol 50, No 2 (2016)
Pages: 240-243
Section: Physics of Semiconductor Devices
URL: https://journals.rcsi.science/1063-7826/article/view/196801
DOI: https://doi.org/10.1134/S1063782616020238
ID: 196801

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Statistics

Abstract

Silicon-based light-emitting diodes (LEDs) fabricated by the Si-ion implantation and chemical-vapor deposition methods are studied. Room-temperature dislocation-related electroluminescence (EL) is observed in LEDs based on n-Si. In LEDs based on p-Si, the EL is quenched at temperatures higher than 220 K. The EL-excitation efficiencies are measured for the D1 line at room temperature and the D1 and D4 lines at liquid-nitrogen temperature.