Simulation of drift-diffusion transport of charge carriers in semiconductor layers with a fractal structure in an alternating electric field
- Authors: Rekhviashvili S.S.1, Alikhanov A.A.1
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Affiliations:
- Institute of Applied Mathematics and Automation
- Issue: Vol 51, No 6 (2017)
- Pages: 755-759
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/200061
- DOI: https://doi.org/10.1134/S1063782617060264
- ID: 200061
Cite item
Abstract
Based on the fractional-order partial differential equation, the diffusion-drift charge-carrier transport in a semiconductor layer with a fractal structure under a longitudinal alternating electric field is simulated. The simulation showed that the space–time distributions of carriers are broadened and asymmetric in layers with a fractal structure. Under certain conditions, the effect of charge oscillation frequency doubling in an external alternating electric field is observed.
About the authors
S. Sh. Rekhviashvili
Institute of Applied Mathematics and Automation
Author for correspondence.
Email: rsergo@mail.ru
Russian Federation, ul. Shortanova 89a, Nalchik, 360000
A. A. Alikhanov
Institute of Applied Mathematics and Automation
Email: rsergo@mail.ru
Russian Federation, ul. Shortanova 89a, Nalchik, 360000