Electroluminescence properties of LEDs based on electron-irradiated p-Si
- Authors: Sobolev N.A.1, Shtel’makh K.F.1,2, Kalyadin A.E.1, Aruev P.N.1, Zabrodskiy V.V.1, Shek E.I.1, Yang D.3
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Affiliations:
- Ioffe Physical–Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering
- Issue: Vol 50, No 2 (2016)
- Pages: 252-256
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196816
- DOI: https://doi.org/10.1134/S106378261602024X
- ID: 196816
Cite item
Abstract
The electroluminescence (EL) in n+–p–p+ light-emitting-diode (LED) structures based on Si irradiated with electrons and annealed at high temperature is studied. The LEDs are fabricated by the chemical- vapor deposition of polycrystalline silicon layers doped with high concentrations of boron and phosphorus. Transformation of the EL spectra with current in the LEDs is well described by six Gaussian curves. The peak positions of these curves are current-independent and equal to 1233, 1308, 1363, 1425, 1479, and 1520 nm. The dependences of the integrated EL intensity and of the full-width at half-maximum (FWHM) of the lines on current are examined.
About the authors
N. A. Sobolev
Ioffe Physical–Technical Institute
Author for correspondence.
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
K. F. Shtel’makh
Ioffe Physical–Technical Institute; Peter the Great St. Petersburg Polytechnic University
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251
A. E. Kalyadin
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
P. N. Aruev
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
V. V. Zabrodskiy
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
E. I. Shek
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
D. Yang
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering
Email: nick@sobolev.ioffe.rssi.ru
China, Hangzhou, 310027