Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs

Abstract

The effect of the electrostatic potential induced by charge carriers of the same sign, localized in a deep quantum well, on the current–voltage characteristics of photodetector heterostructures is theoretically analyzed. It is shown for the example of a p–i–n structure with a single deep quantum well in the i-type region that the shielding of an external electric field makes the differential photoconductivity of the heterostructure higher than that in a p–i–n structure without an intermediate 2D layer.