Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers
- Authors: Sokolova Z.N.1, Veselov D.A.1, Pikhtin N.A.1, Tarasov I.S.1, Asryan L.V.2
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Affiliations:
- Ioffe Institute
- Virginia Polytechnic Institute and State University
- Issue: Vol 51, No 7 (2017)
- Pages: 959-964
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/200660
- DOI: https://doi.org/10.1134/S1063782617070326
- ID: 200660
Cite item
Abstract
The operating characteristics of semiconductor quantum-well lasers, calculated with consideration for an increase in the internal optical loss in the waveguide region with increasing pump current, are presented. The condition of global electroneutrality in the structure is used. This condition consists in that the total charge of electrons in the 2D active region (quantum well) and bulk waveguide region (optical confinement layer) is equal to the total charge of holes in these two regions. Good agreement between the calculated and experimentally determined light–current characteristics is obtained.
About the authors
Z. N. Sokolova
Ioffe Institute
Author for correspondence.
Email: zina.sokolova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
D. A. Veselov
Ioffe Institute
Email: zina.sokolova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. A. Pikhtin
Ioffe Institute
Email: zina.sokolova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. S. Tarasov
Ioffe Institute
Email: zina.sokolova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
L. V. Asryan
Virginia Polytechnic Institute and State University
Email: zina.sokolova@mail.ioffe.ru
United States, Blacksburg, VA, 24061