Email this article Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au
- Authors: Zainabidinov S.1, Tursunov I.G.1, Khimmatkulov O.1
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Affiliations:
- National University of Uzbekistan
- Issue: Vol 52, No 8 (2018)
- Pages: 1027-1030
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/203848
- DOI: https://doi.org/10.1134/S1063782618080262
- ID: 203848
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Abstract
The influence of hydrostatic pressure on the current–voltage characteristics of surface-barrier diode structures of the Sb–p-Si〈Mn〉–Au type are investigated. The potential-barrier height and the baric coefficient of its variation are found to be eϕδ = 0.75 eV and δ =–1.54 × 10–11 eV/Pa, respectively.
About the authors
S. Zainabidinov
National University of Uzbekistan
Author for correspondence.
Email: ikromjon0804@gmail.com
Uzbekistan, Tashkent, 100174
I. G. Tursunov
National University of Uzbekistan
Email: ikromjon0804@gmail.com
Uzbekistan, Tashkent, 100174
O. Khimmatkulov
National University of Uzbekistan
Email: ikromjon0804@gmail.com
Uzbekistan, Tashkent, 100174
