Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix (\({{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}\) = 15.5 mol %)
- Authors: Undalov Y.K.1, Terukov E.I.1,2, Trapeznikova I.N.1
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Affiliations:
- Ioffe Institute
- Saint Petersburg Electrotechnical University “LETI”
- Issue: Vol 52, No 10 (2018)
- Pages: 1255-1263
- Section: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204128
- DOI: https://doi.org/10.1134/S1063782618100214
- ID: 204128
Cite item
Abstract
The effect of various operating conditions of time-modulated DC (direct current) plasma on the formation of an amorphous a-SiOx:H matrix and silicon nanoclusters is studied using IR (infrared) and photoluminescence spectra. DC-plasma modulation consists in repeated (n = 180) switching off and on of the magnetron magnet coil with various time combinations, toff = 1, 2, 5, 10, 15 s and ton = 5, 10, 15 s, respectively, at a fixed oxygen concentration (\({{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}\) = 15.5 mol %) in a (SiH4 + Ar + О2) gas mixture. The positive effect of self-induction on the formation of both the amorphous matrix and silicon nanoclusters is confirmed. The largest values of x in a-SiOx:H and photoluminescence intensity are observed in the case of the combination of prolonged plasma residence in the working state (ton = 10–15 s) and the maximum magnetic-field strength. The effect of toff on the processes of the formation of both the a-SiOx:H matrix and silicon nanoclusters is also noted.
About the authors
Yu. K. Undalov
Ioffe Institute
Author for correspondence.
Email: undalov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. I. Terukov
Ioffe Institute; Saint Petersburg Electrotechnical University “LETI”
Email: undalov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197376
I. N. Trapeznikova
Ioffe Institute
Email: undalov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021