Email this article Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential
- Authors: Bovkun L.S.1,2, Ikonnikov A.V.1,3, Aleshkin V.Y.1,4, Krishtopenko S.S.1, Antonov A.V.1, Spirin K.E.1, Mikhailov N.N.5,6, Dvoretsky S.A.5, Gavrilenko V.I.1,4
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Affiliations:
- Institute for Physics of Microstructures
- Laboratoire National des Champs Magnétiques Intenses
- Moscow State University
- Lobachevsky State University of Nizhny Novgorod (NNSU)
- Rzhanov Institute of Semiconductor Physics
- Novosibirsk State University
- Issue: Vol 51, No 12 (2017)
- Pages: 1562-1570
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201998
- DOI: https://doi.org/10.1134/S106378261712003X
- ID: 201998
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Abstract
Shubnikov-de Haas oscillations are studied in 8-nm-wide HgTe/CdHgTe quantum wells with an electron concentration of (1.7–13) × 1011 cm–2 in the temperature range from 1.6 to 40 K. The gaps between Landau levels and the quantum relaxation time are determined from the temperature dependence of the oscillation amplitude at integer filling factors. The experimental gap values are found to be in good agreement with the results of the single-particle calculation of the level energies using the 8-band Kane model. The experimental widths of the density of states are indicative of profound screening of the exchange interaction in HgTe/CdHgTe quantum wells.
About the authors
L. S. Bovkun
Institute for Physics of Microstructures; Laboratoire National des Champs Magnétiques Intenses
Author for correspondence.
Email: bovkun@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; 25 rue des Martyrs, Grenoble, 38042
A. V. Ikonnikov
Institute for Physics of Microstructures; Moscow State University
Email: bovkun@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Moscow, 119991
V. Ya. Aleshkin
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: bovkun@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. S. Krishtopenko
Institute for Physics of Microstructures
Email: bovkun@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
A. V. Antonov
Institute for Physics of Microstructures
Email: bovkun@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
K. E. Spirin
Institute for Physics of Microstructures
Email: bovkun@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
N. N. Mikhailov
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: bovkun@ipmras.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
S. A. Dvoretsky
Rzhanov Institute of Semiconductor Physics
Email: bovkun@ipmras.ru
Russian Federation, Novosibirsk, 630090
V. I. Gavrilenko
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: bovkun@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
