On the Characteristic Features of the Impurity Energy Spectrum in Arsenides


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

The impurity energy spectrum of undoped n-type GaAs, InAs, CdSnAs2, CdGeAs2, and CdTe, ZnO bulk crystals is studied based on a quantitative analysis of the baric and temperature dependences of the kinetic coefficients. It is found that the deep-level donor center corresponds to the intrinsic vacancy defect in the anion sublattice in the above-listed semiconductors. The conclusion on the nature of the donor center, i.e., the vacancy in the anion sublattice, is based on the fact that, in contrast to shallow impurity centers which trace the intrinsic band under uniform pressure, to which they are genetically related, the energy of deep impurity centers with respect to absolute vacuum remains constant under isotropic compression of the lattice. Therefore, it seems favorable to study the evolution of the carrier energy spectrum in semiconductors under uniform-pressure conditions. The energy-level positions with respect to the conduction-band edge and pressure coefficients of the energy gaps between them and the corresponding conduction-band bottom are determined. The shift of the energy level of the deep donor center to the conduction-band depth with decreasing band gap is observed.

作者简介

I. Kamiliov

Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences

Email: hadzhygm@mail.ru
俄罗斯联邦, Makhachkala, 367015

M. Daunov

Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences

Email: hadzhygm@mail.ru
俄罗斯联邦, Makhachkala, 367015

G. Gajiev

Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences

编辑信件的主要联系方式.
Email: hadzhygm@mail.ru
俄罗斯联邦, Makhachkala, 367015

R. Arslanov

Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences

Email: hadzhygm@mail.ru
俄罗斯联邦, Makhachkala, 367015

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Ltd., 2019