Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface
- Autores: Lenshin A.S.1
- 
							Afiliações: 
							- Voronezh State University
 
- Edição: Volume 52, Nº 3 (2018)
- Páginas: 324-330
- Seção: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/202582
- DOI: https://doi.org/10.1134/S1063782618030156
- ID: 202582
Citar
Resumo
Comparative studies of the specific features of the composition and photoluminescence properties of porous silicon with different morphologies are carried out by infrared and photoluminescence spectroscopy. On the basis of the experimental data and commonly accepted theoretical models, the main factors that influence the photoluminescence intensity and its deterioration upon the exposure of porous silicon to directed radiation in the visible region are established. By the example of porous silicon with 50–100 nm pores, the possibility of improving the above characteristics by chemical treatment in polyacrylic acid is shown.
Sobre autores
A. Lenshin
Voronezh State University
							Autor responsável pela correspondência
							Email: lenshin@phys.vsu.ru
				                					                																			                												                	Rússia, 							Voronezh, 394000						
Arquivos suplementares
 
				
			 
						 
						 
					 
						 
						 
				 
  
  
  
  
  Enviar artigo por via de e-mail
			Enviar artigo por via de e-mail  Acesso aberto
		                                Acesso aberto Acesso está concedido
						Acesso está concedido Somente assinantes
		                                		                                        Somente assinantes
		                                					