Email this article On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs
- Authors: Arutyunyan S.S.1,2, Pavlov A.Y.1, Pavlov B.Y.1, Tomosh K.N.1, Fedorov Y.V.1
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Affiliations:
- Institute of Ultrahigh Frequency Semiconductor Electronics
- Institute of Microelectronics Technology and High-Purity Materials
- Issue: Vol 50, No 8 (2016)
- Pages: 1117-1121
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197748
- DOI: https://doi.org/10.1134/S1063782616080078
- ID: 197748
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Abstract
The fabrication of a two-layer Si3N4/SiO2 dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si3N4/SiO2 mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.
About the authors
S. S. Arutyunyan
Institute of Ultrahigh Frequency Semiconductor Electronics; Institute of Microelectronics Technology and High-Purity Materials
Author for correspondence.
Email: spartakmain@gmail.com
Russian Federation, Moscow, 117105; Institutskaya ul. 6, Chernogolovka, Moscow oblast, 142432
A. Yu. Pavlov
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: spartakmain@gmail.com
Russian Federation, Moscow, 117105
B. Yu. Pavlov
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: spartakmain@gmail.com
Russian Federation, Moscow, 117105
K. N. Tomosh
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: spartakmain@gmail.com
Russian Federation, Moscow, 117105
Yu. V. Fedorov
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: spartakmain@gmail.com
Russian Federation, Moscow, 117105
