Thermoelectric effects in nanoscale layers of manganese silicide
- Authors: Erofeeva I.V.1, Dorokhin M.V.1, Lesnikov V.P.1, Kuznetsov Y.M.1, Zdoroveyshchev A.V.1, Pitirimova E.A.1
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Affiliations:
- Research Institute for Physics and Technology
- Issue: Vol 51, No 11 (2017)
- Pages: 1403-1408
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201465
- DOI: https://doi.org/10.1134/S1063782617110112
- ID: 201465
Cite item
Abstract
The values of the thermoelectric power, layer resistivity and thermal conductivity of a MnxSi1–x nanoscale layer and MnxSi1–x/Si superlattice on silicon depending on the growth temperature in the range T = 300–600 K are found experimentally. The contribution of the nanoscale film and substrate to the thermoelectric effect is discussed. The thermoelectric figure of merit of a single manganese-ssilicide layer, superlattice, and layer/substrate system is estimated. The largest figure of merit ZT = 0.59 ± 0.06 is found for Mn0.2Si0.8 at T = 600 K.
About the authors
I. V. Erofeeva
Research Institute for Physics and Technology
Author for correspondence.
Email: irfeya@mail.ru
Russian Federation, Nizhny Novgorod, 603950
M. V. Dorokhin
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Russian Federation, Nizhny Novgorod, 603950
V. P. Lesnikov
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Russian Federation, Nizhny Novgorod, 603950
Yu. M. Kuznetsov
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Russian Federation, Nizhny Novgorod, 603950
A. V. Zdoroveyshchev
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Russian Federation, Nizhny Novgorod, 603950
E. A. Pitirimova
Research Institute for Physics and Technology
Email: irfeya@mail.ru
Russian Federation, Nizhny Novgorod, 603950