Thermoelectric effects in nanoscale layers of manganese silicide

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Аннотация

The values of the thermoelectric power, layer resistivity and thermal conductivity of a MnxSi1–x nanoscale layer and MnxSi1–x/Si superlattice on silicon depending on the growth temperature in the range T = 300–600 K are found experimentally. The contribution of the nanoscale film and substrate to the thermoelectric effect is discussed. The thermoelectric figure of merit of a single manganese-ssilicide layer, superlattice, and layer/substrate system is estimated. The largest figure of merit ZT = 0.59 ± 0.06 is found for Mn0.2Si0.8 at T = 600 K.

Авторлар туралы

I. Erofeeva

Research Institute for Physics and Technology

Хат алмасуға жауапты Автор.
Email: irfeya@mail.ru
Ресей, Nizhny Novgorod, 603950

M. Dorokhin

Research Institute for Physics and Technology

Email: irfeya@mail.ru
Ресей, Nizhny Novgorod, 603950

V. Lesnikov

Research Institute for Physics and Technology

Email: irfeya@mail.ru
Ресей, Nizhny Novgorod, 603950

Yu. Kuznetsov

Research Institute for Physics and Technology

Email: irfeya@mail.ru
Ресей, Nizhny Novgorod, 603950

A. Zdoroveyshchev

Research Institute for Physics and Technology

Email: irfeya@mail.ru
Ресей, Nizhny Novgorod, 603950

E. Pitirimova

Research Institute for Physics and Technology

Email: irfeya@mail.ru
Ресей, Nizhny Novgorod, 603950

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