Email this article Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors
- Authors: Yurkov S.N.1, Mnatsakanov T.T.1, Levinshtein M.E.2, Tandoev A.G.1, Palmour J.W.3
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Affiliations:
- All-Russia Electrotechnical Institute
- Ioffe Physical–Technical Institute
- Cree Inc.
- Issue: Vol 51, No 2 (2017)
- Pages: 225-231
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199479
- DOI: https://doi.org/10.1134/S1063782617020257
- ID: 199479
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Abstract
The impact of non-1D effects caused by the spread of the gate current in the base layer on the gate switch-on current in 4H-SiC thyristors is considered. It is shown that a new switching mechanism implemented in 4H-SiC thyristors results in the dependence of the gate switch-on current on the thyristor parameters, with this dependence being fundamentally different from that in conventional silicon thyristors.
About the authors
S. N. Yurkov
All-Russia Electrotechnical Institute
Email: melev@nimis.ioffe.rssi.ru
Russian Federation, Moscow, 111250
T. T. Mnatsakanov
All-Russia Electrotechnical Institute
Email: melev@nimis.ioffe.rssi.ru
Russian Federation, Moscow, 111250
M. E. Levinshtein
Ioffe Physical–Technical Institute
Author for correspondence.
Email: melev@nimis.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
A. G. Tandoev
All-Russia Electrotechnical Institute
Email: melev@nimis.ioffe.rssi.ru
Russian Federation, Moscow, 111250
J. W. Palmour
Cree Inc.
Email: melev@nimis.ioffe.rssi.ru
United States, 4600 Silicon Dr., Durham, NC, 27703
