Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates
- Authors: Mynbaev K.D.1,2, Zablotsky S.V.1,3, Shilyaev A.V.1, Bazhenov N.L.1, Yakushev M.V.4, Marin D.V.4, Varavin V.S.4, Dvoretsky S.A.4,5
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Affiliations:
- Ioffe Physical–Technical Institute
- ITMO National Research University
- St. Petersburg State Electrotechnical University “LETI”
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- National Research Tomsk State University
- Issue: Vol 50, No 2 (2016)
- Pages: 208-211
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/196777
- DOI: https://doi.org/10.1134/S1063782616020160
- ID: 196777
Cite item
Abstract
Defects in mercury-cadmium-telluride heteroepitaxial structures (with 0.3 to 0.4 molar fraction of cadmium telluride) grown by molecular-beam epitaxy on silicon substrates are studied. The low-temperature photoluminescence method reveals that there are comparatively deep levels with energies of 50 to 60 meV and shallower levels with energies of 20 to 30 meV in the band gap. Analysis of the temperature dependence of the minority carrier lifetime demonstrates that this lifetime is controlled by energy levels with an energy of ∼30 meV. The possible relationship between energy states and crystal-structure defects is discussed.
About the authors
K. D. Mynbaev
Ioffe Physical–Technical Institute; ITMO National Research University
Author for correspondence.
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101
S. V. Zablotsky
Ioffe Physical–Technical Institute; St. Petersburg State Electrotechnical University “LETI”
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197376
A. V. Shilyaev
Ioffe Physical–Technical Institute
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. L. Bazhenov
Ioffe Physical–Technical Institute
Email: mynkad@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. V. Yakushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: mynkad@mail.ioffe.ru
Russian Federation, Novosibirsk, 630090
D. V. Marin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: mynkad@mail.ioffe.ru
Russian Federation, Novosibirsk, 630090
V. S. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: mynkad@mail.ioffe.ru
Russian Federation, Novosibirsk, 630090
S. A. Dvoretsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch; National Research Tomsk State University
Email: mynkad@mail.ioffe.ru
Russian Federation, Novosibirsk, 630090; Tomsk, 634050