Electrical and Photoelectric Properties of the TiN/p-InSe Heterojunction
- Authors: Orletsky I.G.1, Ilashchuk M.I.1, Brus V.V.1, Marianchuk P.D.1, Solovan M.M.1, Kovalyuk Z.D.1
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Affiliations:
- Yuri Fedkovych Chernivtsi National University
- Issue: Vol 50, No 3 (2016)
- Pages: 334-338
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/196878
- DOI: https://doi.org/10.1134/S1063782616030167
- ID: 196878
Cite item
Abstract
The conditions for fabricating photosensitive TiN/p-InSe heterojunctions by the reactive-magnetron sputtering of thin titanium-nitride films onto freshly cleaved p-InSe single-crystal substrates is investigated. The presence of a tunnel-transparent high-resistivity In2Se3 layer at the heterojunction is revealed from analysis of the I–V characteristics, and the effect of this layer on the electrical properties and photosensitivity spectra of the heterostructures is analyzed. The dominant current transport mechanisms through the TiN/p-InSe energy barrier under forward and reverse bias are determined.
About the authors
I. G. Orletsky
Yuri Fedkovych Chernivtsi National University
Author for correspondence.
Email: i.orletskyi@chnu.edu.ua
Ukraine, Chernivtsi, 58012
M. I. Ilashchuk
Yuri Fedkovych Chernivtsi National University
Email: i.orletskyi@chnu.edu.ua
Ukraine, Chernivtsi, 58012
V. V. Brus
Yuri Fedkovych Chernivtsi National University
Email: i.orletskyi@chnu.edu.ua
Ukraine, Chernivtsi, 58012
P. D. Marianchuk
Yuri Fedkovych Chernivtsi National University
Email: i.orletskyi@chnu.edu.ua
Ukraine, Chernivtsi, 58012
M. M. Solovan
Yuri Fedkovych Chernivtsi National University
Email: i.orletskyi@chnu.edu.ua
Ukraine, Chernivtsi, 58012
Z. D. Kovalyuk
Yuri Fedkovych Chernivtsi National University
Email: i.orletskyi@chnu.edu.ua
Ukraine, Chernivtsi, 58012