Thermoelectric and Galvanomagnetic Properties of Layered n-Bi2 –xSbxTe3 –ySey Films
- Authors: Lukyanova L.N.1, Usov O.A.1, Volkov M.P.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 53, No 5 (2019)
- Pages: 620-623
- Section: XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/206054
- DOI: https://doi.org/10.1134/S1063782619050154
- ID: 206054
Cite item
Abstract
The thermoelectric properties in the temperature range 4.2–300 K and magnetoresistance oscillations in strong magnetic fields at low temperatures are studied in nanostructured layered films of topological thermoelectric materials n-Bi2 –xSbxTe3 –ySey. It is shown that the thermoelectric figure of merit in layered n-Bi2 –xSbxTe3 –ySey films is larger than that in the bulk material due both to an increase in the Seebeck coefficient below room temperature and to a decrease in the thermal conductivity and its weaker temperature dependence. Analysis of the magnetoresistance oscillations is used to determine the parameters of the topological surface states of Dirac fermions and estimate their influence on the thermoelectric properties.
About the authors
L. N. Lukyanova
Ioffe Institute
Author for correspondence.
Email: lidia.lukyanova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
O. A. Usov
Ioffe Institute
Email: lidia.lukyanova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. P. Volkov
Ioffe Institute
Email: lidia.lukyanova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021