Simulation of reversely switched dynistors in modes with a lowered primary-ignition threshold

Abstract

A new method for triggering reversely switched dynistors (RSDs) into submicrosecond modes with high current-rise rates being switched at a substantially lower primary ignition threshold is proposed and studied numerically in detail by computer simulation methods. The numerical problem considers all the relevant physical laws for the spatially distributed and discrete elements of RSD switching unit, including the nonlocal isochronous interaction between the working regions of power RSDs or the photodiode control switches and external-circuit components. The simulation results confirm the possibility of reaching, in actual practice for RSDs, current-rise rates up to dJ/dt = 3 × 10¹⁰ A cm^–2 s^–1 in circuits based on lowpower semiconductor control switches at primary ignition levels relative to a reversely injected charge, which has a density as low as 1–2 μC/cm². These parameters have been considered previously as only a theoretical limit, unachievable in the submicrosecond range for real thyristor switches.