Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD
- Authors: Aleshkin V.Y.1, Baidus N.V.2, Dubinov A.A.1, Kudryavtsev K.E.1, Nekorkin S.M.2, Kruglov A.V.2, Reunov D.G.2
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Affiliations:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Lobachevsky State University of Nizhny Novgorod
- Issue: Vol 53, No 8 (2019)
- Pages: 1138-1142
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/206686
- DOI: https://doi.org/10.1134/S1063782619080037
- ID: 206686
Cite item
Abstract
The mode of the growth of InGaAs quantum dots by MOS-hydride epitaxy on GaAs substrates without a deviation and with a deviation of 2° is selected for laser structures emitting at wavelengths above 1.2 μm at room temperature. As a result, a quantum-dot density of 4 × 1010 cm–2 is achieved. Stimulated emission is observed in laser structures with seven layers of quantum dots at a wavelength of 1.06 μm at liquid-nitrogen temperature. The threshold power density of optical pumping is about 5 kW/cm2.
Keywords
About the authors
V. Ya. Aleshkin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sanya@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
N. V. Baidus
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
A. A. Dubinov
Institute for Physics of Microstructures, Russian Academy of Sciences
Author for correspondence.
Email: sanya@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
K. E. Kudryavtsev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sanya@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
S. M. Nekorkin
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
A. V. Kruglov
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
D. G. Reunov
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950