Email this article On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy
- Authors: Sharofidinov S.S.1,2, Nikolaev V.I.1,2,3, Smirnov A.N.1, Chikiryaka A.V.1, Nikitina I.P.1, Odnoblyudov M.A.4, Bugrov V.E.2, Romanov A.E.1,2
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Affiliations:
- Ioffe Physical–Technical Institute
- St. Petersburg National Research University of Information Technologies, Mechanics and Optics
- OOO Perfect Crystals
- St. Petersburg State Polytechnic University
- Issue: Vol 50, No 4 (2016)
- Pages: 541-544
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197020
- DOI: https://doi.org/10.1134/S1063782616040217
- ID: 197020
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Abstract
The main problem of the epitaxial growth of thick AlN layers on a Si substrate consists in the formation of cracks, which complicates the application of structures of this kind in the fabrication of semiconductor devices. The possibility of obtaining crack-free AlN layers with a thickness exceeding 1 μm and a mirror- smooth surface by hydride vapor-phase epitaxy is demonstrated. The properties of the layers are studied by X-diffraction analysis, optical and scanning electron microscopy, and Raman spectroscopy.
About the authors
Sh. Sh. Sharofidinov
Ioffe Physical–Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Author for correspondence.
Email: shukrillo71@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101
V. I. Nikolaev
Ioffe Physical–Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics and Optics; OOO Perfect Crystals
Email: shukrillo71@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 194064
A. N. Smirnov
Ioffe Physical–Technical Institute
Email: shukrillo71@mail.ru
Russian Federation, St. Petersburg, 194021
A. V. Chikiryaka
Ioffe Physical–Technical Institute
Email: shukrillo71@mail.ru
Russian Federation, St. Petersburg, 194021
I. P. Nikitina
Ioffe Physical–Technical Institute
Email: shukrillo71@mail.ru
Russian Federation, St. Petersburg, 194021
M. A. Odnoblyudov
St. Petersburg State Polytechnic University
Email: shukrillo71@mail.ru
Russian Federation, St. Petersburg, 195251
V. E. Bugrov
St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Email: shukrillo71@mail.ru
Russian Federation, St. Petersburg, 197101
A. E. Romanov
Ioffe Physical–Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Email: shukrillo71@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101
