In As1–xSbx heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers
- Authors: Guseynov R.R.1, Tanriverdiyev V.A.1, Kipshidze G.2, Aliyeva Y.N.1, Aliguliyeva K.V.1, Abdullayev N.A.1, Mamedov N.T.1
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Affiliations:
- Institute of Physics
- Stony Brook University
- Issue: Vol 51, No 4 (2017)
- Pages: 524-530
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/199790
- DOI: https://doi.org/10.1134/S1063782617040066
- ID: 199790
Cite item
Abstract
Unrelaxed InAs1–xSbx (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs1–xSbx alloys is established.
About the authors
R. R. Guseynov
Institute of Physics
Email: gela.kishidze@stonybrook.ede
Azerbaijan, Baku, AZ-1143
V. A. Tanriverdiyev
Institute of Physics
Email: gela.kishidze@stonybrook.ede
Azerbaijan, Baku, AZ-1143
G. Kipshidze
Stony Brook University
Author for correspondence.
Email: gela.kishidze@stonybrook.ede
United States, New York, 11794
Ye. N. Aliyeva
Institute of Physics
Email: gela.kishidze@stonybrook.ede
Azerbaijan, Baku, AZ-1143
Kh. V. Aliguliyeva
Institute of Physics
Email: gela.kishidze@stonybrook.ede
Azerbaijan, Baku, AZ-1143
N. A. Abdullayev
Institute of Physics
Email: gela.kishidze@stonybrook.ede
Azerbaijan, Baku, AZ-1143
N. T. Mamedov
Institute of Physics
Email: gela.kishidze@stonybrook.ede
Azerbaijan, Baku, AZ-1143