Email this article Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB
- Authors: Mitrofanov M.I.1, Voznyuk G.V.1, Rodin S.N.1, Lundin W.V.1, Evtikhiev V.P.1, Tsatsulnikov A.F.2
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Affiliations:
- Ioffe Institute
- SHM R and E Center, Russian Academy of Sciences
- Issue: Vol 53, No 16 (2019)
- Pages: 2100-2102
- Section: Nanostructures Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/207599
- DOI: https://doi.org/10.1134/S1063782619120170
- ID: 207599
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About the authors
M. I. Mitrofanov
Ioffe Institute
Author for correspondence.
Email: maxi.mitrofanov@gmail.com
Russian Federation, St. Petersburg, 194021
G. V. Voznyuk
Ioffe Institute
Author for correspondence.
Email: glebufa0@gmail.com
Russian Federation, St. Petersburg, 194021
S. N. Rodin
Ioffe Institute
Author for correspondence.
Email: s_rodin77@mail.ru
Russian Federation, St. Petersburg, 194021
W. V. Lundin
Ioffe Institute
Author for correspondence.
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. P. Evtikhiev
Ioffe Institute
Author for correspondence.
Email: evtikhiev@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. F. Tsatsulnikov
SHM R and E Center, Russian Academy of Sciences
Author for correspondence.
Email: andrew@beam.ioffe.ru
Russian Federation, St. Petersburg
