Email this article Optical Properties of Short-Period InAs/GaSb Superlattices Grown by MOCVD
- Authors: Danilov L.V.1, Levin R.V.1, Nevedomskyi V.N.1, Pushnyi B.V.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 53, No 16 (2019)
- Pages: 2078-2081
- Section: Nanostructures Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/207590
- DOI: https://doi.org/10.1134/S1063782619120091
- ID: 207590
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Abstract
This paper reports the structural and photoluminescent study results of heterostructure with short-period InAs/GaSb superlattice grown by MOCVD with 8/10 ML period thickness. The photoluminescence spectra was observed in the range of 3–5 μm with intensity peak at 3.8 μm. SL minibands theoretical calculation with a high accuracy confirmed the experimental data obtained. This indicates that the specified structural parameters match the chosen growth conditions.
About the authors
L. V. Danilov
Ioffe Institute
Author for correspondence.
Email: danleon84@mail.ioffe.ru
Russian Federation, St Petersburg
R. V. Levin
Ioffe Institute
Email: danleon84@mail.ioffe.ru
Russian Federation, St Petersburg
V. N. Nevedomskyi
Ioffe Institute
Email: danleon84@mail.ioffe.ru
Russian Federation, St Petersburg
B. V. Pushnyi
Ioffe Institute
Email: danleon84@mail.ioffe.ru
Russian Federation, St Petersburg
