Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range
- Authors: Karachinsky L.Y.1,2,3, Novikov I.I.1,2,3, Blokhin S.A.3, Bobrov M.A.3, Zadiranov Y.M.3, Troshkov S.I.3, Egorov A.Y.1,2, Babichev A.V.4,1,2, Kryzhanovskaya N.V.4, Moiseev E.I.4, Gladyshev A.G.1,2
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Affiliations:
- ITMO University
- Connector Optics LLC
- Ioffe Institute
- St. Petersburg Academic University
- Issue: Vol 51, No 9 (2017)
- Pages: 1127-1132
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/201095
- DOI: https://doi.org/10.1134/S1063782617090056
- ID: 201095
Cite item
Abstract
The possibility of fabricating hybrid metamorphic heterostructures for vertical-cavity surfaceemitting lasers working in the 1300-nm spectral range is demonstrated. The metamorphic semiconductor part of the heterostructure with a GaAs/AlGaAs distributed Bragg reflector and an active region based on InAlGaAs/InGaAs quantum wells is grown by molecular-beam epitaxy on a GaAs (100) substrate. The top dielectric mirror with a SiO2/Ta2O5 distributed Bragg reflector is formed by magnetron sputtering. The spectra of the room-temperature microphotoluminescence of these vertical-cavity surface-emitting laser heterostructures are studied under 532-nm excitation in the power range of 0–70 mW (with a focused-beam diameter of ~1 μm). The superlinear dependence of the photoluminescence intensity on the excitation power, narrowing of the photoluminescence peaks, and a change in the modal composition may be indications of lasing. The results obtained give evidence that the technology of the metamorphic growth of heterostructures on GaAs substrates can be used for the fabrication of vertical-cavity surface-emitting lasers working in the 1300- nm spectral range.
About the authors
L. Ya. Karachinsky
ITMO University; Connector Optics LLC; Ioffe Institute
Email: anton.egorov@connector-optics.com
Russian Federation, St. Petersburg, 197101; St. Petersburg, 194292; St. Petersburg, 194021
I. I. Novikov
ITMO University; Connector Optics LLC; Ioffe Institute
Email: anton.egorov@connector-optics.com
Russian Federation, St. Petersburg, 197101; St. Petersburg, 194292; St. Petersburg, 194021
S. A. Blokhin
Ioffe Institute
Email: anton.egorov@connector-optics.com
Russian Federation, St. Petersburg, 194021
M. A. Bobrov
Ioffe Institute
Email: anton.egorov@connector-optics.com
Russian Federation, St. Petersburg, 194021
Yu. M. Zadiranov
Ioffe Institute
Email: anton.egorov@connector-optics.com
Russian Federation, St. Petersburg, 194021
S. I. Troshkov
Ioffe Institute
Email: anton.egorov@connector-optics.com
Russian Federation, St. Petersburg, 194021
A. Yu. Egorov
ITMO University; Connector Optics LLC
Author for correspondence.
Email: anton.egorov@connector-optics.com
Russian Federation, St. Petersburg, 197101; St. Petersburg, 194292
A. V. Babichev
St. Petersburg Academic University; ITMO University; Connector Optics LLC
Email: anton.egorov@connector-optics.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 194292
N. V. Kryzhanovskaya
St. Petersburg Academic University
Email: anton.egorov@connector-optics.com
Russian Federation, St. Petersburg, 194021
E. I. Moiseev
St. Petersburg Academic University
Email: anton.egorov@connector-optics.com
Russian Federation, St. Petersburg, 194021
A. G. Gladyshev
ITMO University; Connector Optics LLC
Email: anton.egorov@connector-optics.com
Russian Federation, St. Petersburg, 197101; St. Petersburg, 194292