Email this article The effect of the electron–phonon interaction on reverse currents of GaAs-based p–n junctions
- Authors: Zhukov A.V.1
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Affiliations:
- Ul’yanovsk State University
- Issue: Vol 50, No 13 (2016)
- Pages: 1734-1737
- Section: Microelectronic Devices and Systems
- URL: https://journals.rcsi.science/1063-7826/article/view/199231
- DOI: https://doi.org/10.1134/S1063782616130145
- ID: 199231
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Abstract
An algorithm for calculating the parameters of the electron–phonon interaction of the EL2 trap has been developed and implemented based on the example of GaAs. Using the obtained parameters, the field dependences of the probabilities of nonradiative transitions from the trap and reverse currents of the GaAs p–n junctions are calculated, which are in good agreement with the experimental data.
About the authors
A. V. Zhukov
Ul’yanovsk State University
Author for correspondence.
Email: ZhukovAndreyV@mail.ru
Russian Federation, Ul’yanovsk, 432017
