Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects
- Authors: Aleksandrov I.A.1, Mansurov V.G.1, Zhuravlev K.S.1,2
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Affiliations:
- Rzhanov Institute of Semiconductor Physics
- Novosibirsk State University
- Issue: Vol 50, No 8 (2016)
- Pages: 1038-1042
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197606
- DOI: https://doi.org/10.1134/S1063782616080042
- ID: 197606
Cite item
Abstract
The carrier recombination dynamics in an ensemble of GaN/AlN quantum dots is studied. The model proposed for describing this dynamics takes into account the transition of carriers between quantum dots and defects in a matrix. Comparison of the experimental and calculated photoluminescence decay curves shows that the interaction between quantum dots and defects slows down photoluminescence decay in the ensemble of GaN/AlN quantum dots.
About the authors
I. A. Aleksandrov
Rzhanov Institute of Semiconductor Physics
Author for correspondence.
Email: Aleksandrov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. G. Mansurov
Rzhanov Institute of Semiconductor Physics
Email: Aleksandrov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
K. S. Zhuravlev
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: Aleksandrov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090