Polarization-modulation diagnostics of thermal stresses in an integrated pressure transducer
- Authors: Mikhailenko I.V.1, Orlov A.T.2, Serdega B.K.1
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Affiliations:
- Lashkaryov Institute of Semiconductor Physics
- National Technical University “Kyiv Polytechnical Institute”
- Issue: Vol 51, No 4 (2017)
- Pages: 498-502
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199759
- DOI: https://doi.org/10.1134/S1063782617040145
- ID: 199759
Cite item
Abstract
A semiconductor pressure transducer consisting of a sensing resistor implanted into a silicon membrane as an elastic mechanical element is studied by the modulation polarimetry technique. Internal mechanical stresses are detected. The coordinate distributions of uniaxial stresses are measured in two cases: stresses remaining from local crystal doping inhomogeneities and stresses caused by heating by flowing current. The coordinate distribution of the temperature caused by the heat flux released by the resistor current is determined by double integration of the stress function, taking into account corresponding boundary conditions.
About the authors
I. V. Mikhailenko
Lashkaryov Institute of Semiconductor Physics
Email: bserdega@isp.kiev.ua
Ukraine, pr. Nauki 41, Kyiv, 03028
A. T. Orlov
National Technical University “Kyiv Polytechnical Institute”
Email: bserdega@isp.kiev.ua
Ukraine, pr. Pobedy 37, Kyiv, 03057
B. K. Serdega
Lashkaryov Institute of Semiconductor Physics
Author for correspondence.
Email: bserdega@isp.kiev.ua
Ukraine, pr. Nauki 41, Kyiv, 03028