Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching
- Authors: Levitskii Y.V.1, Mitrofanov M.I.1, Voznyuk G.V.1, Nikolayev D.N.1, Mizerov M.N.1, Evtikhiev V.P.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 53, No 11 (2019)
- Pages: 1545-1549
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/207330
- DOI: https://doi.org/10.1134/S1063782619110101
- ID: 207330
Cite item
Abstract
The ion-beam etching of AlGaAs/GaAs heterostructures gives rise to radiation defects and, as a result, leads to photoluminescence quenching. Annealing at 620°C in an atmosphere of As almost completely restores the quantum efficiency of photoluminescence in the case of radiation-induced defects lying at a distance of up to 150 nm from the heterointerface.
About the authors
Ya. V. Levitskii
Ioffe Institute
Email: Evtikhiev@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. I. Mitrofanov
Ioffe Institute
Email: Evtikhiev@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
G. V. Voznyuk
Ioffe Institute
Email: Evtikhiev@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
D. N. Nikolayev
Ioffe Institute
Email: Evtikhiev@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. N. Mizerov
Ioffe Institute
Email: Evtikhiev@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. P. Evtikhiev
Ioffe Institute
Author for correspondence.
Email: Evtikhiev@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021