Email this article Temperature dependence of the hall coefficient in the Вi1–xSbx System (x = 0.06, 0.12)
- Authors: Tairov B.A.1, Gasanova X.A.1, Selim-zade R.I.1
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Affiliations:
- Abdullaev Institute of Physics
- Issue: Vol 50, No 8 (2016)
- Pages: 996-1000
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197544
- DOI: https://doi.org/10.1134/S1063782616080248
- ID: 197544
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Abstract
The temperature dependences of the Fermi level, concentrations of charge carriers, and their effective mass ratio in the Bi1–xSbx system (x = 0.06, 0.12) are determined on the basis of quantitative analysis of the temperature dependence of the Hall coefficient in the temperature range of 77–300 K.
About the authors
B. A. Tairov
Abdullaev Institute of Physics
Author for correspondence.
Email: btairov@physics.ab.az
Azerbaijan, Baku, Az-1143
X. A. Gasanova
Abdullaev Institute of Physics
Email: btairov@physics.ab.az
Azerbaijan, Baku, Az-1143
R. I. Selim-zade
Abdullaev Institute of Physics
Email: btairov@physics.ab.az
Azerbaijan, Baku, Az-1143
