Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers

Abstract

A method for calculating the states of multivalent donors and acceptors in Hg_{1 –x}Cd_xTe materials is developed. The ionization energies of deep acceptor and donor centers in epitaxial Hg_{1 –x}Cd_xTe films are calculated. The calculation method takes into account the influence of both the valence band and the conduction band on the states of impurity-defect centers. The calculations of energies for the levels of tetravalent acceptors and donors associated with crystalline structure defects indicate the intercenter nature of lines observed previously in the photoluminescence spectra of Hg_{1 –x}Cd_xTe films.