Email this article Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates
- Authors: Alekseev P.A.1, Dunaevskiy M.S.1, Mikhailov A.O.1, Lebedev S.P.2, Lebedev A.A.1, Ilkiv I.V.3, Khrebtov A.I.2, Bouravleuv A.D.1,3,4, Cirlin G.E.2,3,4
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Affiliations:
- Ioffe Institute
- ITMO University
- St. Petersburg Academic University
- Institute for Analytical Instrumentation, Russian Academy of Sciences
- Issue: Vol 52, No 12 (2018)
- Pages: 1611-1615
- Section: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204807
- DOI: https://doi.org/10.1134/S1063782618120047
- ID: 204807
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Abstract
The electrical properties of GaAs nanowires grown on a 6H-SiC (0001) substrate covered with graphene single layers and bilayers are studied. The nanowires are grown by molecular-beam epitaxy, with gold as a catalyst. The electrical properties are studied by measuring and analyzing the current–voltage characteristics of single nanowires vertically grown on a substrate. Numerical simulation of the experimental current–voltage curves revealed the presence of a ~0.6-V-high Schottky barrier between the nanowires and graphene. The appearance of the barrier is due to the formation of excess arsenic at the nanowire/graphene interface.
About the authors
P. A. Alekseev
Ioffe Institute
Author for correspondence.
Email: npoxep@gmail.com
Russian Federation, St. Petersburg, 194021
M. S. Dunaevskiy
Ioffe Institute
Email: npoxep@gmail.com
Russian Federation, St. Petersburg, 194021
A. O. Mikhailov
Ioffe Institute
Email: npoxep@gmail.com
Russian Federation, St. Petersburg, 194021
S. P. Lebedev
ITMO University
Email: npoxep@gmail.com
Russian Federation, St. Petersburg, 197101
A. A. Lebedev
Ioffe Institute
Email: npoxep@gmail.com
Russian Federation, St. Petersburg, 194021
I. V. Ilkiv
St. Petersburg Academic University
Email: npoxep@gmail.com
Russian Federation, St. Petersburg, 194021
A. I. Khrebtov
ITMO University
Email: npoxep@gmail.com
Russian Federation, St. Petersburg, 197101
A. D. Bouravleuv
Ioffe Institute; St. Petersburg Academic University; Institute for Analytical Instrumentation, Russian Academy of Sciences
Email: npoxep@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 190103
G. E. Cirlin
ITMO University; St. Petersburg Academic University; Institute for Analytical Instrumentation, Russian Academy of Sciences
Email: npoxep@gmail.com
Russian Federation, St. Petersburg, 197101; St. Petersburg, 194021; St. Petersburg, 190103
