Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates
- Authors: Novikov A.V.1, Yurasov D.V.1, Baidakova N.A.1, Bushuykin P.A.1, Andreev B.A.1, Yunin P.A.1, Drozdov M.N.1, Yablonskiy A.N.1, Kalinnikov M.A.1, Krasilnik Z.F.1
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Affiliations:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Issue: Vol 53, No 10 (2019)
- Pages: 1318-1323
- Section: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/207156
- DOI: https://doi.org/10.1134/S1063782619100154
- ID: 207156
Cite item
Abstract
Comparative studies of the luminescence properties of Sb-doped Ge layers grown on Ge(001) and Si(001) substrates are carried out. It is shown that, in contrast to the case of Ge:Sb layers grown on Si, a considerable contribution to the photoluminescence signal from Ge:Sb/Ge(001) layers is made by indirect optical transitions. This fact is attributed to the longer charge-carrier lifetime in Ge:Sb/Ge homoepitaxial structures because of the lack of crystal-lattice defects related to the relaxation of elastic strains in such structures. It is shown that the experimentally observed significant increase in the contribution of direct optical transitions to the total photoluminescence signal with increasing doping level of Ge:Sb/Ge(001) layers results from an increase in the population of electron states in the Γ valley. At Sb concentrations much higher than the equilibrium solubility of Sb in Ge, partial electrical activation of the impurity is observed, and in this case, a profound effect on the emission properties of Ge:Sb layers grown on different substrates is produced by nonradiative-recombination centers, whose role can be played by clusters of impurity atoms.
About the authors
A. V. Novikov
Institute for Physics of Microstructures, Russian Academy of Sciences
Author for correspondence.
Email: anov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
D. V. Yurasov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: anov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
N. A. Baidakova
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: anov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
P. A. Bushuykin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: anov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
B. A. Andreev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: anov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
P. A. Yunin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: anov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
M. N. Drozdov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: anov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
A. N. Yablonskiy
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: anov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
M. A. Kalinnikov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: anov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
Z. F. Krasilnik
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: anov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950