Email this article Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection
- Authors: Polischuk O.V.1, Fateev D.V.1, Popov V.V.1,2
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Affiliations:
- Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
- Saratov State University
- Issue: Vol 52, No 12 (2018)
- Pages: 1534-1539
- Section: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204665
- DOI: https://doi.org/10.1134/S1063782618120187
- ID: 204665
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Abstract
The dependence of the plasmon terahertz resonant frequency in the generation mode on the quasi-Fermi energy in the active (ungated) region of graphene with an inverse charge carrier population and on the Fermi energy in the gated p- and n-type regions in a periodic p–i–n structure based on graphene with injection pumping is theoretically investigated. It is shown that electrically frequency-tunable nanoscale plasmon graphene amplifiers and generators operating in a broad terahertz frequency range at room temperature can be designed.
About the authors
O. V. Polischuk
Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Author for correspondence.
Email: polischuk.sfire@mail.ru
Russian Federation, Saratov, Saratov Branch, 410019
D. V. Fateev
Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Email: popov_slava@yahoo.co.uk
Russian Federation, Saratov, Saratov Branch, 410019
V. V. Popov
Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences; Saratov State University
Author for correspondence.
Email: popov_slava@yahoo.co.uk
Russian Federation, Saratov, Saratov Branch, 410019; Saratov, 410012
