Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices


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The radiation resistance to the gamma-neutron irradiation (~1 MeV) of diodes based on symmetric GaAs/AlAs 30-period superlattices is for the first time studied theoretically and experimentally. The model band diagram and equivalent circuit of the structure under study are used in calculations. Calculations are performed in the quasi-hydrodynamic approximation taking into account the heating of diodes under study by flowing current. The results of calculating the current–voltage characteristics and limiting operating frequencies of the diodes before and after gamma-neutron irradiation correlate well with the experimental data.

Sobre autores

D. Pavelyev

Lobachevsky State University of Nizhny Novgorod

Autor responsável pela correspondência
Email: bess009@mail.ru
Rússia, Nizhny Novgorod, 603950

A. Vasilev

Submicron Heterostructures for Microelectronics, Research and Engineering Center,
Russian Academy of Sciences

Email: bess009@mail.ru
Rússia, St. Petersburg, 194021

V. Kozlov

Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures, Russian Academy of Sciences

Email: bess009@mail.ru
Rússia, Nizhny Novgorod, 603950; Nizhny Novgorod, 603087

E. Obolenskaya

Lobachevsky State University of Nizhny Novgorod

Email: bess009@mail.ru
Rússia, Nizhny Novgorod, 603950

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