Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy
- Authors: Sobolev M.S.1, Lazarenko A.A.1, Mizerov A.M.1, Nikitina E.V.1, Pirogov E.V.1, Timoshnev S.N.1, Bouravleuv A.D.1,2
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Affiliations:
- St. Petersburg Academic University
- St. Petersburg Electrotechnical University
- Issue: Vol 52, No 16 (2018)
- Pages: 2128-2131
- Section: 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY
- URL: https://journals.rcsi.science/1063-7826/article/view/205472
- DOI: https://doi.org/10.1134/S1063782618160327
- ID: 205472
Cite item
Abstract
The growth of single crystalline GaP nucleation and buffer layers on Si substrates by molecular-beam epitaxy is demonstrated. The use of two different regimes of migration-enhanced epitaxy was studied. It was found that p–n junctions can be created due to the interdiffusion during the growth of GaP layer on p-type Si substrate.
About the authors
M. S. Sobolev
St. Petersburg Academic University
Author for correspondence.
Email: sobolevsms@gmail.com
Russian Federation, St. Petersburg, 194021
A. A. Lazarenko
St. Petersburg Academic University
Email: sobolevsms@gmail.com
Russian Federation, St. Petersburg, 194021
A. M. Mizerov
St. Petersburg Academic University
Email: sobolevsms@gmail.com
Russian Federation, St. Petersburg, 194021
E. V. Nikitina
St. Petersburg Academic University
Email: sobolevsms@gmail.com
Russian Federation, St. Petersburg, 194021
E. V. Pirogov
St. Petersburg Academic University
Email: sobolevsms@gmail.com
Russian Federation, St. Petersburg, 194021
S. N. Timoshnev
St. Petersburg Academic University
Email: sobolevsms@gmail.com
Russian Federation, St. Petersburg, 194021
A. D. Bouravleuv
St. Petersburg Academic University; St. Petersburg Electrotechnical University
Email: sobolevsms@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197376