Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy

M. S. Sobolev; A. A. Lazarenko; A. M. Mizerov; E. V. Nikitina; E. V. Pirogov; S. N. Timoshnev; A. D. Bouravleuv

doi:10.1134/S1063782618160327

Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy

作者: Sobolev M.S.¹, Lazarenko A.A.¹, Mizerov A.M.¹, Nikitina E.V.¹, Pirogov E.V.¹, Timoshnev S.N.¹, Bouravleuv A.D.¹^,2
隶属关系:
1. St. Petersburg Academic University
2. St. Petersburg Electrotechnical University
期: 卷 52, 编号 16 (2018)
页面: 2128-2131
栏目: 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY
URL: https://journals.rcsi.science/1063-7826/article/view/205472
DOI: https://doi.org/10.1134/S1063782618160327
ID: 205472

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The growth of single crystalline GaP nucleation and buffer layers on Si substrates by molecular-beam epitaxy is demonstrated. The use of two different regimes of migration-enhanced epitaxy was studied. It was found that p–n junctions can be created due to the interdiffusion during the growth of GaP layer on p-type Si substrate.