Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO2 (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection
- Authors: Romanov V.V.1, Belykh I.A.1, Ivanov E.V.1, Alekseev P.A.1, Il’inskaya N.D.1, Yakovlev Y.P.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 53, No 6 (2019)
- Pages: 822-827
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/206363
- DOI: https://doi.org/10.1134/S1063782619060174
- ID: 206363
Cite item
Abstract
Asymmetrical double InAs/InAsSb/InAsSbP heterostructures are grown by metalorganic vapor phase epitaxy. Two types (A and B) of light-emitting diodes with wavelengths of 4.1 and 4.7 μm at the emission-spectrum maximum are formed from these heterostructures. The room-temperature I–V and electroluminescence characteristics of the light-emitting diodes are investigated. The emission powers of light-emitting diodes A and B in the quasi-continuous mode (at a frequency of 512 Hz) at a current of 250 mA are 24 and 15 μW, respectively. In the pulsed mode (at a frequency of 512 Hz and a pulse length of 1 μs), the emission powers of light-emitting diodes A and B at a current of 2.1 A reach 158 and 76 μW, respectively. The developed light-emitting diodes can be used as high-efficiency emission sources in optical absorption sensors for detecting carbon dioxide and monoxide gases in the atmosphere.
About the authors
V. V. Romanov
Ioffe Institute
Author for correspondence.
Email: romanovvv@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. A. Belykh
Ioffe Institute
Email: romanovvv@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. V. Ivanov
Ioffe Institute
Email: romanovvv@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
P. A. Alekseev
Ioffe Institute
Email: romanovvv@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. D. Il’inskaya
Ioffe Institute
Email: romanovvv@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. P. Yakovlev
Ioffe Institute
Email: romanovvv@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021