Experimental determination of the derivative of the current–voltage characteristic of a nonlinear semiconductor structure using modulation Fourier analysis
- Authors: Kuzmichev N.D.1, Vasyutin M.A.1, Shilkin D.A.1
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Affiliations:
- Ogarev Mordovia State University
- Issue: Vol 50, No 6 (2016)
- Pages: 815-818
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197283
- DOI: https://doi.org/10.1134/S1063782616060129
- ID: 197283
Cite item
Abstract
The derivative of the nonlinear current–voltage characteristic of two antiparallel p–n junctions is experimentally obtained by the method of modulation Fourier analysis. The derivative of the current–voltage characteristic is reconstructed using the current dependences of the first and higher voltage harmonics. The advantage of modulation Fourier analysis over numerical differentiation is experimentally validated for the first time. The applied technique has no limitations on the current modulation amplitude. Large amplitudes make it possible to identify the nature of the nonlinearity of the dependence under study and to determine the contribution of the nonlinear fraction against the background of significant linearity.
About the authors
N. D. Kuzmichev
Ogarev Mordovia State University
Author for correspondence.
Email: kuzmichevnd@yandex.ru
Russian Federation, ul. Bolshevistskaya 68, Saransk, 430005
M. A. Vasyutin
Ogarev Mordovia State University
Email: kuzmichevnd@yandex.ru
Russian Federation, ul. Bolshevistskaya 68, Saransk, 430005
D. A. Shilkin
Ogarev Mordovia State University
Email: kuzmichevnd@yandex.ru
Russian Federation, ul. Bolshevistskaya 68, Saransk, 430005