Nonresonance Phase Conjugation of Light at the Surface of GaN Films Upon High-Power Optical Pumping


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The possibility of the nonresonance phase conjugation of light in an excited semiconductor medium is shown theoretically and experimentally. In epitaxial GaN films pumped with a nitrogen laser at room temperature, the induced phase conjugation of light in the visible and infrared spectral regions is detected for the first time. The dependences of the phase-conjugation signal intensity on the photon energy and laser-pumping intensity are studied. An interpretation of the effect as a result of the absorption and refraction of light at laser-induced free charge carriers in the semiconductor medium is proposed.

作者简介

A. Gruzintsev

Institute of Microelectronic Technology and Ultra-High-Purity Materials, Russian Academy of Sciences

Email: gran@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432

A. Redkin

Institute of Microelectronic Technology and Ultra-High-Purity Materials, Russian Academy of Sciences

编辑信件的主要联系方式.
Email: gran@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432

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