Nonresonance Phase Conjugation of Light at the Surface of GaN Films Upon High-Power Optical Pumping
- 作者: Gruzintsev A.N.1, Redkin A.N.1
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隶属关系:
- Institute of Microelectronic Technology and Ultra-High-Purity Materials, Russian Academy of Sciences
- 期: 卷 53, 编号 1 (2019)
- 页面: 22-27
- 栏目: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/205555
- DOI: https://doi.org/10.1134/S106378261901010X
- ID: 205555
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详细
The possibility of the nonresonance phase conjugation of light in an excited semiconductor medium is shown theoretically and experimentally. In epitaxial GaN films pumped with a nitrogen laser at room temperature, the induced phase conjugation of light in the visible and infrared spectral regions is detected for the first time. The dependences of the phase-conjugation signal intensity on the photon energy and laser-pumping intensity are studied. An interpretation of the effect as a result of the absorption and refraction of light at laser-induced free charge carriers in the semiconductor medium is proposed.
作者简介
A. Gruzintsev
Institute of Microelectronic Technology and Ultra-High-Purity Materials, Russian Academy of Sciences
Email: gran@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
A. Redkin
Institute of Microelectronic Technology and Ultra-High-Purity Materials, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: gran@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
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