Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates
- Authors: Galiev G.B.1, Pushkarev S.S.1, Buriakov A.M.2, Bilyk V.R.2, Mishina E.D.2, Klimov E.A.1, Vasil’evskii I.S.3, Maltsev P.P.1
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Affiliations:
- Institute of Ultrahigh-Frequency Semiconductor Electronics
- Moscow Technological University “MIREA”
- National Research Nuclear University “MEPhI”
- Issue: Vol 51, No 4 (2017)
- Pages: 503-508
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199762
- DOI: https://doi.org/10.1134/S1063782617040054
- ID: 199762
Cite item
Abstract
The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.
About the authors
G. B. Galiev
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: s_s_e_r_p@mail.ru
Russian Federation, Moscow, 117105
S. S. Pushkarev
Institute of Ultrahigh-Frequency Semiconductor Electronics
Author for correspondence.
Email: s_s_e_r_p@mail.ru
Russian Federation, Moscow, 117105
A. M. Buriakov
Moscow Technological University “MIREA”
Email: s_s_e_r_p@mail.ru
Russian Federation, Moscow, 119454
V. R. Bilyk
Moscow Technological University “MIREA”
Email: s_s_e_r_p@mail.ru
Russian Federation, Moscow, 119454
E. D. Mishina
Moscow Technological University “MIREA”
Email: s_s_e_r_p@mail.ru
Russian Federation, Moscow, 119454
E. A. Klimov
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: s_s_e_r_p@mail.ru
Russian Federation, Moscow, 117105
I. S. Vasil’evskii
National Research Nuclear University “MEPhI”
Email: s_s_e_r_p@mail.ru
Russian Federation, Moscow, 115409
P. P. Maltsev
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: s_s_e_r_p@mail.ru
Russian Federation, Moscow, 117105