Email this article Photodetectors based on CuInS2
- Authors: Vostretsova L.N.1, Gavrilov S.A.2, Bulyarsky S.V.1
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Affiliations:
- Ulyanovsk State University
- National Research University of Electronic Technology “MIET”
- Issue: Vol 50, No 1 (2016)
- Pages: 106-111
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196697
- DOI: https://doi.org/10.1134/S1063782616010061
- ID: 196697
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Abstract
It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS2 and, consequently, the efficiency of light conversion, are of the tunneling–recombination type. These processes occur via electronic states within the band gap with an activation energy of 0.2 eV and a concentration on the order of 8 × 1016 cm–2.
About the authors
L. N. Vostretsova
Ulyanovsk State University
Email: Kapiton04@yandex.ru
Russian Federation, Ulyanovsk, 432017
S. A. Gavrilov
National Research University of Electronic Technology “MIET”
Email: Kapiton04@yandex.ru
Russian Federation, Moscow, Zelenograd, 124498
S. V. Bulyarsky
Ulyanovsk State University
Author for correspondence.
Email: Kapiton04@yandex.ru
Russian Federation, Ulyanovsk, 432017
