Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy
- Authors: Pechnikov A.I.1, Stepanov S.I.2, Chikiryaka A.V.1, Scheglov M.P.1, Odnobludov M.A.3, Nikolaev V.I.1,2
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Affiliations:
- Ioffe Institute
- Perfect Crystals LLC
- Peter the Great St. Petersburg Polytechnic University
- Issue: Vol 53, No 6 (2019)
- Pages: 780-783
- Section: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/206315
- DOI: https://doi.org/10.1134/S1063782619060150
- ID: 206315
Cite item
Abstract
This work reports on the epitaxial-film growth and characterization of a new wide-gap semiconductor α-Ga2O3. Layers are deposited by chloride vapor phase epitaxy on sapphire substrates with a basal orientation. The thickness of the layers of the investigated samples is from 0.5 μm to a value of 10 μm, the latter being record-breaking for today. The structural and optical properties of the obtained samples are studied. It is shown that all samples are structurally uniform, single phase, and have an R\(\bar {3}\)c corundum-like structure similar to that of the sapphire used as the substrate. It is shown that the full-width at half-maximum of the rocking curves for the (0006) reflection of α-Ga2O3 changes with the layer thickness and approaches 240 arcsec for the thickest layers. Both thin and thick layers are transparent in the visible and UV (ultraviolet) spectral range up to an absorption edge at 5.2 eV.
About the authors
A. I. Pechnikov
Ioffe Institute
Email: chikiryaka@mail.ru
Russian Federation, St. Petersburg, 194021
S. I. Stepanov
Perfect Crystals LLC
Email: chikiryaka@mail.ru
Russian Federation, St. Petersburg, 194064
A. V. Chikiryaka
Ioffe Institute
Author for correspondence.
Email: chikiryaka@mail.ru
Russian Federation, St. Petersburg, 194021
M. P. Scheglov
Ioffe Institute
Email: chikiryaka@mail.ru
Russian Federation, St. Petersburg, 194021
M. A. Odnobludov
Peter the Great St. Petersburg Polytechnic University
Email: chikiryaka@mail.ru
Russian Federation, St. Petersburg, 195251
V. I. Nikolaev
Ioffe Institute; Perfect Crystals LLC
Email: chikiryaka@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194064