Email this article Numerical Simulation of the Current–Voltage Characteristics of Bilayer Resistive Memory Based on Non-Stoichiometric Metal Oxides
- Authors: Umnyagin G.M.1, Degtyarov V.E.1, Obolenskiy S.V.1
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Affiliations:
- Lobachevsky State University of Nizhny Novgorod
- Issue: Vol 53, No 9 (2019)
- Pages: 1246-1248
- Section: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/206929
- DOI: https://doi.org/10.1134/S1063782619090252
- ID: 206929
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Abstract
The current–voltage characteristics of a resistive-memory structure based on non-stoichiometric tantalum oxides is numerically simulated. The results of pulsed studies of structures with different shapes of the conductive filament, such as a truncated cone with different generatrix inclination angles, are presented. It is shown how the shape and total volume of the conductive filament affects the current amplitude and the number of pulses necessary for complete filament breaking and restoration.
About the authors
G. M. Umnyagin
Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: Umnyagingm@gmail.com
Russian Federation, Nizhny Novgorod, 603950
V. E. Degtyarov
Lobachevsky State University of Nizhny Novgorod
Email: Umnyagingm@gmail.com
Russian Federation, Nizhny Novgorod, 603950
S. V. Obolenskiy
Lobachevsky State University of Nizhny Novgorod
Email: Umnyagingm@gmail.com
Russian Federation, Nizhny Novgorod, 603950
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