Dependence of the Bulk Electrical Properties of Multisilicon on the Grain Misorientation Parameters
- Authors: Peshcherova S.M.1, Yakimov E.B.2, Nepomnyashchikh A.I.1, Orlov V.I.2, Feklisova O.V.2, Pavlova L.A.1, Presnyakov R.V.1
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Affiliations:
- Vinogradov Institute of Geochemistry, Siberian Branch, Russian Academy of Sciences
- Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
- Issue: Vol 53, No 1 (2019)
- Pages: 55-59
- Section: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/205581
- DOI: https://doi.org/10.1134/S1063782619010160
- ID: 205581
Cite item
Abstract
The recombination activity of intragrain defects in multicrystalline silicon is investigated by the electron or laser beam induced current methods. The interrelation of the grain orientation with the character of the distribution of intragrain defects (dislocations and impurity inclusions) and their recombination activity is revealed. The defect grain structure is investigated using various etching procedures to reveal the defects. It is shown that the defect density and distribution in the grains depend on their orientation relative the growth axis. Therefore, it is intragrain defects and impurities that are to a large degree responsible for degradation of the nonequilibrium carrier lifetime when compared with grain boundaries.
About the authors
S. M. Peshcherova
Vinogradov Institute of Geochemistry, Siberian Branch, Russian Academy of Sciences
Author for correspondence.
Email: spescherova@mail.ru
Russian Federation, Irkutsk, 664033
E. B. Yakimov
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
Email: spescherova@mail.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
A. I. Nepomnyashchikh
Vinogradov Institute of Geochemistry, Siberian Branch, Russian Academy of Sciences
Email: spescherova@mail.ru
Russian Federation, Irkutsk, 664033
V. I. Orlov
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
Email: spescherova@mail.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
O. V. Feklisova
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
Email: spescherova@mail.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
L. A. Pavlova
Vinogradov Institute of Geochemistry, Siberian Branch, Russian Academy of Sciences
Email: spescherova@mail.ru
Russian Federation, Irkutsk, 664033
R. V. Presnyakov
Vinogradov Institute of Geochemistry, Siberian Branch, Russian Academy of Sciences
Email: spescherova@mail.ru
Russian Federation, Irkutsk, 664033