Email this article Compositional dependence of the band gap of (CuIn5S8)1–x · (FeIn2S4)x alloys
- Authors: Bodnar I.V.1, Victorov I.A.1, Jaafar M.A.1, Pauliukavets S.A.1
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Affiliations:
- Belarusian State University of Information and Radio Electronics
- Issue: Vol 50, No 2 (2016)
- Pages: 154-157
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/196731
- DOI: https://doi.org/10.1134/S1063782616020068
- ID: 196731
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Abstract
The transmittance spectra of single-crystal CuIn5S8 and FeIn2S4 ternary compounds and (CuIn5S8)1–x · (FeIn2S4)x alloys grown by planar crystallization of the melt are studied in the region of the fundamental-absorption edge. From the experimentally recorded spectra, the band gap of the compounds and their alloys is determined, and the compositional dependence of the band gap is constructed. It is established that the band gap nonlinearly varies with the composition parameter x (with a maximum at the average content x) and can be described by a quadratic dependence.
About the authors
I. V. Bodnar
Belarusian State University of Information and Radio Electronics
Author for correspondence.
Email: chemzav@bsuir.by
Belarus, Minsk, 220013
I. A. Victorov
Belarusian State University of Information and Radio Electronics
Email: chemzav@bsuir.by
Belarus, Minsk, 220013
M. A. Jaafar
Belarusian State University of Information and Radio Electronics
Email: chemzav@bsuir.by
Belarus, Minsk, 220013
S. A. Pauliukavets
Belarusian State University of Information and Radio Electronics
Email: chemzav@bsuir.by
Belarus, Minsk, 220013
