Thermodynamic Description of Oscillations of the Magnetization of a Silicon Nanostructure in Weak Fields at Room Temperature. Density of States
- Authors: Romanov V.V.1, Kozhevnikov V.A.1, Bagraev N.T.1,2
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Affiliations:
- Peter the Great St. Petersburg Polytechnic University
- Ioffe Institute
- Issue: Vol 53, No 12 (2019)
- Pages: 1633-1636
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/207378
- DOI: https://doi.org/10.1134/S106378261916022X
- ID: 207378
Cite item
Abstract
The observation of de Haas–van Alphen oscillations when studying the silicon nanostructure at room temperature in weak magnetic fields enables the use of thermodynamic relations to calculate the density of states at the Fermi level at critical values of external magnetic-field strengths for integer filling factors.
About the authors
V. V. Romanov
Peter the Great St. Petersburg Polytechnic University
Email: Bagraev@mail.ru
Russian Federation, St. Petersburg, 195251
V. A. Kozhevnikov
Peter the Great St. Petersburg Polytechnic University
Email: Bagraev@mail.ru
Russian Federation, St. Petersburg, 195251
N. T. Bagraev
Peter the Great St. Petersburg Polytechnic University; Ioffe Institute
Author for correspondence.
Email: Bagraev@mail.ru
Russian Federation, St. Petersburg, 195251; St. Petersburg, 194021