Email this article Selective Epitaxy of Submicron GaN Structures
- Authors: Lundin W.V.1, Tsatsulnikov A.F.2, Rodin S.N.1, Sakharov A.V.1, Mitrofanov M.I.1, Levitskii I.V.1,2, Voznyuk G.V.1,3, Evtikhiev V.P.1
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Affiliations:
- Ioffe Institute
- Research and Engineering Center on Submicron Heterostructures for Microelectronics, Russian Academy of Sciences
- ITMO University
- Issue: Vol 53, No 16 (2019)
- Pages: 2118-2120
- Section: Nanostructures Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/207610
- DOI: https://doi.org/10.1134/S1063782619120157
- ID: 207610
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Abstract
The effect of the growth temperature and the flow of trimethylgallium on the process of selective epitaxy of gallium nitride in windows of submicron size have been studied. The conditions under which homogeneous nucleation and coalescence of nuclei are combined with a low growth rate are determined. The steady growth of variously oriented gallium nitride strips with a height of 50 nm and a width of 600 nm was realized.
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About the authors
W. V. Lundin
Ioffe Institute
Author for correspondence.
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. F. Tsatsulnikov
Research and Engineering Center on Submicron Heterostructures for Microelectronics,Russian Academy of Sciences
Author for correspondence.
Email: andrew@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. N. Rodin
Ioffe Institute
Author for correspondence.
Email: s_rodin77@mail.ru
Russian Federation, St. Petersburg, 194021
A. V. Sakharov
Ioffe Institute
Author for correspondence.
Email: val@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. I. Mitrofanov
Ioffe Institute
Author for correspondence.
Email: maxi.mitrofanov@gmail.com
Russian Federation, St. Petersburg, 194021
I. V. Levitskii
Ioffe Institute; Research and Engineering Center on Submicron Heterostructures for Microelectronics,Russian Academy of Sciences
Author for correspondence.
Email: levitskyar@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
G. V. Voznyuk
Ioffe Institute; ITMO University
Author for correspondence.
Email: glebufa0@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101
V. P. Evtikhiev
Ioffe Institute
Author for correspondence.
Email: Evtikhiev@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
