Effect of Hydrostatic Pressure on the Static Permittivity of Germanium
- Authors: Musaev A.M.1
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Affiliations:
- Institute of Physics, Dagestan Scientific Center
- Issue: Vol 52, No 1 (2018)
- Pages: 31-33
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/202214
- DOI: https://doi.org/10.1134/S1063782618010141
- ID: 202214
Cite item
Abstract
The dependence of the static permittivity of single-crystal germanium on hydrostatic pressure up to P ≈ 7.4 GPa is studied experimentally. As the pressure is increased to P ≈ 4 GPa, the permittivity of Ge decreases by a factor of ~13 to ε = 1.22. As the pressure is increased further to P ≈ 7 GPa, a moderate increase in ε to the initial value is observed. In the range 7–7.4 GPa, the permittivity increases to a value larger than 1000. The experimental dependences obtained in the study substantially differ from the previously known dependences.
About the authors
A. M. Musaev
Institute of Physics, Dagestan Scientific Center
Author for correspondence.
Email: akhmed-musaev@yandex.ru
Russian Federation, Makhachkala, 367003