Effect of the chemical composition of Cu–In–Ga–Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cells
- Authors: Novikov G.F.1, Tsai W.2, Bocharov K.V.1, Rabenok E.V.1, Jeng M.2, Chang L.2, Feng W.1, Ao J.3, Sun Y.3
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Affiliations:
- Institute of Problems of Chemical Physics
- Department of Electronic Engineering
- Institute of Photoelectronic Thin Film Device and Technology
- Issue: Vol 50, No 10 (2016)
- Pages: 1344-1351
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/198067
- DOI: https://doi.org/10.1134/S1063782616100195
- ID: 198067
Cite item
Abstract
The effect of the [Ga]/[In+Ga] ratio of gallium and indium on the microwave photoconductivity of Cu–In–Ga–Se (CIGSe) films and on the efficiency of solar cells fabricated in accordance with the same technology is investigated. According to the observations of a field-emission scanning electron microscopy (FESEM), the grain size decreases with increasing Ga content. With increasing gallium content in the samples, the photogenerated-electron lifetime and the activation energy of the microwave photoconductivity also decrease. The changes in the activation energy of the through conduction in darkness are less than 20%. Analysis of the obtained data shows that the known effect of the gallium gradient on the efficiency should be associated with modification of the internal structure of grains instead of with their boundaries.
About the authors
G. F. Novikov
Institute of Problems of Chemical Physics
Author for correspondence.
Email: ngf@icp.ac.ru
Russian Federation, Chernogolovka, 142432
Wei-Tao Tsai
Department of Electronic Engineering
Email: ngf@icp.ac.ru
Taiwan, Province of China, Taoyuan
K. V. Bocharov
Institute of Problems of Chemical Physics
Email: ngf@icp.ac.ru
Russian Federation, Chernogolovka, 142432
E. V. Rabenok
Institute of Problems of Chemical Physics
Email: ngf@icp.ac.ru
Russian Federation, Chernogolovka, 142432
Ming-Jer Jeng
Department of Electronic Engineering
Email: ngf@icp.ac.ru
Taiwan, Province of China, Taoyuan
Liann-Be Chang
Department of Electronic Engineering
Email: ngf@icp.ac.ru
Taiwan, Province of China, Taoyuan
Wu-Shiung Feng
Institute of Problems of Chemical Physics
Email: ngf@icp.ac.ru
Russian Federation, Chernogolovka, 142432
Jian-Ping Ao
Institute of Photoelectronic Thin Film Device and Technology
Email: ngf@icp.ac.ru
China, Tianjin
Yun Sun
Institute of Photoelectronic Thin Film Device and Technology
Email: ngf@icp.ac.ru
China, Tianjin